GeSn/SiGeSn Heterostructure and Multi Quantum Well Lasers

Auger Recombination in Quantum - Well InGaAsP Heterostructure Lasers

Interband nonradiative Auger recombination in quantumwell InGaAsP/InP heterostructure lasers has been calculated. It is found that the Auger rate is much reduced in the quasi two-dimensional quantum-well lasers. This suggests that the temperature sensitivity of quantum-well InGaAsP lasers is much less than ordinary structures with much higher values of To at around room temperatures. A CONTINUI...

Carrier lifetimes and threshold currents in HgCdTe double heterostructure and multi-quantum-well lasers

The Auger and radiative combination carrier lifetimes in HgCdTe bulk and quantum-well structures, with band gaps in the wavelength range 2-5 pm, are calculated. The Auger recombination rate in a HgCdTe quantum well (QW) is shown to be significantly smaller than that in bulk material. Threshold current densities of HgCdTe double-heterostructure (DH) and multiquantum-well (MQW) lasers are calcula...

Heterostructure and Quantum Well Physics

Auger Recombination Processes and Threshold Conditions in Asymmetric-Multiple-Quantum-Well Heterostructure Lasers

Different possible processes of non-radiative Auger recombination which occur in the active region of quantum-well lasers are analyzed and the temperature dependence of the lasing threshold in the GaInAs-GaInAsP-InP bi-quantum-well heterolasers with different widths of the quantum wells (4 and 9 nm) is determined. Activated behavior of the Auger recombination is mentioned and respective effecti...

MBE Growth and Characteristics of Periodic Index Separate Confinement Heterostructure InGaAs Quantum-Well Lasers

We have used solid-source molecular beam epitaxy (MBE) to grow InGaAs quantumwell lasers emitting at 980nm in a novel configuration of periodic index separate confinement heterostructure (PINSCH). Periodic multilayers (GaAs/A1GaAs) are utilized as optical confinement layers to reduce the transverse beam divergence as well as to increase the maximum output power. The multilayers are grown by tem...